Physicists achieved a robust and reliable magnetization switching process by domain wall displacement without any applied fields. The effect is observed in tiny asymmetric permalloy rings and may pave ...

Spintronic devices and their operation are governed by the microstructures of magnetic domains. These magnetic domain structures undergo complex, drastic changes when an external magnetic field is ...

This process is repeated several times, whereby the time interval between the first "pump" pulse and the subsequent "probe" pulse is continually extended. As a result, a time series of reflection data ...

The explosive growth of electric vehicles has intensified the search for ways to make electric motors more energy efficient.

MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), ...